this document is a general product description and is subject to change without notice. hynix do es not assume any responsibilit y for use of circuits described. no patent licenses are implied. rev 0.5 / jul. 2007 1 hy27us(08/16)12(1/2)b series 512mbit (64mx8bit / 32 mx16bit) nand flash 512mb nand flash hy27us(08/16)12(1/2)b hy27us0812(1/2)b hy27us1612(1/2)b
rev 0.5 / jul. 2007 2 hy27us(08/16)12(1/2)b series 512mbit (64mx8bit / 32 mx16bit) nand flash document title 512mbit (64mx8bit / 32mx16 bit) nand flash memory revision history revision no. history draft date remark 0.0 initial draft. oct. 19. 2006 preliminary 0.1 1) correct figure 14 & 15 mar. 07. 2007 0.2 1) add ac characteristics - trb : last re high to busy (at sequential read) - tcry : ce high to ready (in case of interception by ce at read) - tceh : ce high hold time (at the last serial read) mar. 26. 2007 0.3 1) add sequential row read feature and figure 2) modify block replacement apr. 27. 2007 0.4 1) add x16 characteristics 2) modify read2 operation (sequential row read) 3) add ac characteristics - toh : re or ce high to output hold may. 29. 2007 0.5 1) correct read id table 16 2) correct system interface using ce don?t care operation 3) correct command set table 5 jul. 20. 2007
rev 0.5 / jul. 2007 3 hy27us(08/16)12(1/2)b series 512mbit (64mx8bit / 32 mx16bit) nand flash features summary high density nand flash memories - cost effective solutions for mass storage applications nand interface - x8 or x16 bus width. - multiplexed address/ data - pinout compatibility for all densities supply voltage - vcc = 2.7 to 3.6v : hy27us(08/16)12(1/2)b memory cell array x8 : (512+16) bytes x 32 pages x 4,096 blocks x16 : (256+8) words x 32 pages x 4,096 blocks page size - x8 device : (512+16) bytes : hy27us0812(1/2)b - x16 device : (256+8) words : hy27us1612(1/2)b block size - x8 device: (16k + 512 spare) bytes - x16 device: (8k + 256 spare) words page read / program - random access: 12us (max.) - sequential access: 30ns (min.) - page program time: 200us (typ.) copy back program mode - fast page copy without external buffering fast block erase - block erase time: 2ms (typ.) status register electronic signature - 1st cycle: manufacturer code - 2nd cycle: device code chip enable don?t care - simple interface with microcontroller hardware data protection - program/erase locked during power transitions ce don?t card option only data retention - 100,000 program/erase cycles (with 1bit/512byte ecc) - 10 years data retention package - hy27us(08/16)12(1/2)b-t(p) : 48-pin tsop1 (12 x 20 x 1.2 mm) - hy27us(08/16)12(1/2)b-t (lead) - hy27us(08/16)12(1/2)b-tp (lead free) - hy27us0812(1/2)b-s(p) : 48-pin usop1 (12 x 17 x 0.65 mm) - hy27us0812(1/2)b-s (lead) - hy27us0812(1/2)b-sp (lead free) - hy27us0812(1/2)b-f(p) : 63-ball fbga (9 x 11 x 1.0 mm) - hy27us0812(1/2)b-f (lead) - hy27us0812(1/2)b-fp (lead free)
rev 0.5 / jul. 2007 4 hy27us(08/16)12(1/2)b series 512mbit (64mx8bit / 32 mx16bit) nand flash 1. summary description the hynix hy27us(08/16)12(1/2)b series is a 64mx8bit with sp are 2mx8 bit capacity. the device is offered in 3.3v vcc power supply. their nand cell provides the most cost-effective solution for the solid state mass storage market. the memory is divided into blocks that can be erased independently so it is po ssible to preserve valid data while old data is erased. the memory contains 4096 blocks, composed by 32 pages consis ting in two nand structures of 16 series connected flash cells. a program operation allows to write the 512-byte (x8 device) or 256-word (x16 device) page in typical 200us and an erase operation can be performed in typica l 2ms on a 16k-byte (x8 device) block. data in the page can be read out at 30ns cycle time (3.3v devi ce) per byte. the i/o pins serve as the ports for address and data input/output as well as command in put. this interface allows a reduced pin count and easy migration towards differ- ent densities, without any rearrangement of footprint. commands, data and addresses are synchronously introduced using ce , we , ale and cle input pin. the on-chip program/erase controller automates all progra m and erase functions includ ing pulse repetition, where required, and internal verifica tion and margining of data. the modify operations can be locked using the wp input pin . the output pin r/b (open drain buffer) signals the stat us of the device during each operation. in a system with multiple memories the r/b pins can be connected all together to provide a global status signal. even the write-intensive systems can take advantage of th e hy27us(08/16)12(1/2)b extended reliability of 100k pro- gram/erase cycles by providing ecc (error correc ting code) with real time mapping-out algorithm. the chip is offered with the ce don?t care function. this option allows the di rect download of the code from the nand flash memory device by a microcontroller, since the ce transitions do not stop the read operation. the copy back function allows the optimi zation of defective blocks management: when a page program operation fails the data can be directly programmed in anot her page inside the same array section without the time consuming serial data insertion phase. this device includes also extra features like otp/unique id area, read id2 extension. the hy27us(08/16)12(1/2)b is available in 48 - tsop1 12 x 20 mm package, 48 - usop1 12 x 17 mm, fbga 9 x 11 mm. 1.1 product list part number orization vcc range package hy27us0812(1/2)b x8 2.7v - 3.6 volt 48tsop1/ 48usop1/ 63fbga hy27us1612(1/2)b x16 48tsop1
rev 0.5 / jul. 2007 5 hy27us(08/16)12(1/2)b series 512mbit (64mx8bit / 32 mx16bit) nand flash 9 & |